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【Market View】DRAM: The 50 nm challenge for the DRAM industry; NAND Flash: 2H08 memory card shipment to increase almost 30% HoH; PC: Niche market segment has derived from low-cost notebook
Published Jul.08 2008,15:13 PM (GMT+8)
In the DRAM industry, traditional ArF dry lithography equipment is still the mainstream fabrication tool, with its physical limit being identified at 65nm. This implies that for any design geometry that is smaller than 65nm, shift to immersion tool is necessary. (Note: Immersion tool utilizes water to replace air as media in between lithography lens and wafer surface for circuitry patterning. Since water delivers a higher refraction rate, smaller linewidth resulted thus breaks physical limit.) Vast capex required for process node advancement, especially procurement of expensive immersion tool, is a big challenge for those DRAM makers who are still bleeding in red.
【Market View】DRAM: Contract price remains firm, but gap between spot and contract still remains; NAND Flash: Downhill Trend Amid Quarterly Financials Pressure and Seasonal Downturn
Published Jul.01 2008,16:42 PM (GMT+8)
A low transaction volume during seasonal downturn is normal, but a divergent price trend in two market places is indeed rare. spot price of eTT 1Gb dropped by 8.4% in two weeks’ time, down from the high-level US$2.15 in mid June to US$1.97 on June 30. A divergent price trend is observed in DRAM contract and spot market. While DRAM contract price is trending up steadily amid tight supply, the downward spot price trend only reverse to a flat trend last week after experienced consecutive drops since mid June.
【Market View】Price Gap Attracts OEMs Buying from Spot Vendors; Micron maps out NAND Flash roadmap at Memory Day
Published Jun.24 2008,17:54 PM (GMT+8)
A dismal DRAM spot price is observed last week due to: 1, PC shipments likely to fail expectation in 2Q; 2, flurry of speculations about possible circulation of defective Samsung chips at spot market. Magnitude of price drop was relatively sharp at 5%, with price of DDR2 eTT 1Gb once dropped below US$2.
【Market View】DRAM Price is waiting to go steady up in Q3; Arrival of 3G iPhone poses gleam of light to NAND Flash market
Published Jun.17 2008,15:19 PM (GMT+8)
DRAM transaction remains slow in the spot market last week. As both demand and supply volume reduced, a mild price decline is observed, with price of DDR2 eTT 1Gb maintained at US$2.10 range. DRAM spot prices are expected to have a mild consolidation in the near term, but the downside should be limited. DRAMeXchange believes spot pricing should go steadily up in 3Q.
【Market View】Comparatively Low Spot Price Evokes OEM’s Desire; MID to innovate new Internet surfing demand in the next generation
Published Jun.10 2008,17:59 PM (GMT+8)
Despite a low volume transaction atmosphere persisted last week, spot price of eTT DDR2 appreciated by ~5% after a Korean maker said to have reclaimed those defective DRAM chips from OEM customers. Even without strong actual demand in the spot market right now, industry players generally think this may cause short term impact to the supply. With low downside risk of DRAM price and the upcoming hot season, speculating buying started coming back.
【Market View】Conservative procurement mutes transaction prior to high season; Samsung Mobile Solution Forum recap; Seasonal upturn guaranteed, but uncertainties still exist
Published Jun.04 2008,15:17 PM (GMT+8)
DRAM spot price trend was still weak last week, with price fluctuation for both eTT and branded DDR2 remained limited. Price of 512Mb DDR2 was flat at US$0.98 and 1Gb was up 1.5% at US$2.01 during May 27-June 2. Whereas for the branded segment, price of 512Mb DDR2 667MHz was flat at US$1.02 and 1Gb was down 0.9% at US$2.13 in the same period.
【Market View】Computex Taipei a key indicator for ongoing price trend; Growth of average NAND Flash content per MP3/PMP to bring a 29% QoQ demand bit growth in 2Q08
Published May.27 2008,16:45 PM (GMT+8)
DRAM spot price trend did not very much affected by the Hynix China fab power outage incident. Prices generally stayed flat, instead of an expected upward in a noticeable fashion. Despite there still existed appreciation, magnitude of growth was limited. In the eTT segment, prices of 512Mb and 1Gb dropped by a respective 2.9% and 1.0% to US$1.0 and US$1.98 during May 20-26. Whereas for the branded segment, prices of 512Mb 667MHz stayed flat at US$1.04 and 1Gb 667MHz up by a mere 0.9% to US$2.17 in the same period.
【Market View】Hynix JV HNSL to encounter blackout incident at Wuxi, China fab; SSD to rise as star product in storage space
Published May.20 2008,15:49 PM (GMT+8)
A power outage accident took place in HNSL (Hynix Numonyx Semiconductor Ltd.) due to a problem in the power transmission facilities in the Wuxi Export Processing Zone. The power shut down has lasted near 16 hours from 11:30am on May 19th to 2:30am on May 20th. Hynix has confirmed the accident and believe the overall impact to the whole operations should not be severe as the emergence power supply system was activated instantly. The real impact is still under evaluation.
【Market View】Top-15 DRAM module roundup: Kingston manages to achieve 30% YoY sales growth despite industry trough; Global NAND Flash memory card and UFD makers ranking by sales in FY07
Published May.13 2008,15:54 PM (GMT+8)
While ASP of DDR2 512Mb and 1Gb plunged by a respective 86% and 70% and edged to makers’ variable costs in FY07, not only DRAM makers but DRAM module makers suffered. Any players, who do not manage their financials or inventory well, were all exposed to stiff risks. Yet, DRAM module makers still managed to maintain sales growth amidst the stiff pricing environment.
【Market View】DRAM 1HMay contract price: Mainstream 1GB chip jumps by 10%; 1Q08 sales ranking of branded NAND Flash makers
Published May.06 2008,14:37 PM (GMT+8)
After slowing down on DRAM capacity ramp and yield issue on 66nm, Hynix has announced only 5% shipment bit growth in its Q108 financial result. Meanwhile, Qimonda reported a shipment bit growth decline of 9%. Inotera also showed a relatively flat QoQ bit growth while transitioning to 70nm process. Although Elpida Q1 production bit growth increased 33%, its DDR2 customers are primarily big module houses, not PC OEMs. Therefore, the low Q108 QoQ bit growth caused DRAM supply tight in contract market. In addition, because of the market stipulation that DRAM price will soon recover causing buyers to stock up their inventory, spot market price for DRAM rose significantly in April. From mid-March to early May, branded DDR2 1Gb 667MHz chip price rose from US$1.91 to US$2.16, or an increase of 11.3%, and DDR2 667MHz 1Gb eTT rose from US$1.6 to US$2.04, or an increase of 27.5%.
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